HN1C01FUY DANE TECHNICZNE,OBWÓD,FUNKCJA

HN1C01FUY Datasheet PDF

Producent	Pakowanie	Opis	PDF	Temperatura
		TRANSISTOR \| BJT \| PAIR \| NPN \| 50V V(BR)CEO \| 150MA I(C) \| TSOP		Min.°C \| Maks.°C

Toshiba Semiconductor HN1C01F
EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
Toshiba Semiconductor HN1C01F07
Audio-Frequency General-Purpose Amplifier Applications
Toshiba Semiconductor HN1C01FE
Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications
HN1C01FGR
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
Toshiba Semiconductor HN1C01FU
EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)
Toshiba Semiconductor HN1C01FU07
Silicon Epitaxial Type Process) Audio Frequency General Purpose Amplifier Applications
HN1C01FUGR
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
HN1C01FUY
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
Toshiba Semiconductor HN1C01FU_07
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
HN1C01FY
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP
Toshiba Semiconductor HN1C01F_07
Audio-Frequency General-Purpose Amplifier Applications