K4E160411D-B DANE TECHNICZNE,OBWÓD,FUNKCJA

K4E160411D-B Datasheet PDF

• Samsung semiconductor K4E160411D
  4Bit CMOS Dynamic with Extended Data
• Samsung K4E160411D-B
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• Samsung K4E160411D-F
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
• Samsung semiconductor K4E160412D
  4Bit CMOS Dynamic with Extended Data
• Samsung K4E160412D-B
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
• Samsung K4E160412D-F
  4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.