Półprzewodniki Dane techniczne

RN2106F DANE TECHNICZNE,OBWÓD,FUNKCJA

RN2106F Datasheet PDF

ProducentPakowanieOpisPDFTemperatura
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416 Min.°C | Maks.°C

  • Toshiba RN2101
    SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT APPLICATIONS
  • Toshiba Semiconductor RN210107
    Silicon Epitaxial Type Process) Switching, Inverter Circuit, Interface Circuit Driver Circuit Applications
  • RN2101F
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
  • Toshiba Semiconductor RN2101_07
    Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
  • Toshiba RN2102
    SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT APPLICATIONS
  • RN2102F
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
  • Toshiba RN2103
    SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT APPLICATIONS
  • RN2103F
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
  • Toshiba Semiconductor RN2104
    TOSHIBA Transistor Silicon Epitaxial Type Process)
  • RN2104F
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
  • Toshiba RN2105
    SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT APPLICATIONS
  • RN2105F
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
  • Toshiba RN2106
    SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT APPLICATIONS
  • RN2106F
    TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
  • Toshiba RN2107
    SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT DRIVER CIRCUIT APPLICATIONS

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